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AO4425 Datasheet

Part Number AO4425
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel FET
Datasheet AO4425 DatasheetAO4425 Datasheet (PDF)

AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM The AO4425 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4425 is Pb-free (meets ROHS & Sony .

  AO4425   AO4425






Part Number AO4429
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel FET
Datasheet AO4425 DatasheetAO4429 Datasheet (PDF)

AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM The AO4429 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L .

  AO4425   AO4425







Part Number AO4427
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel FET
Datasheet AO4425 DatasheetAO4427 Datasheet (PDF)

AO4427 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ (VGS = -20V) RDS(ON) < 14mΩ (VGS = -10V) ESD Rating: 2KV HBM The AO4427 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROH.

  AO4425   AO4425







Part Number AO4423L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AO4425 DatasheetAO4423L Datasheet (PDF)

AO4423/AO4423L 30V P-Channel MOSFET General Description The AO4423/AO4423L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ (VGS = -20V) (VGS = -20V) (VGS = -10V) * RoHS and Halogen-Free Compliant ESD Protected 100% UIS tested 100% Rg tested (note *) Top View D D D D SOIC-8 Bott.

  AO4425   AO4425







Part Number AO4423
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AO4425 DatasheetAO4423 Datasheet (PDF)

Rev 4: May 2005 AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) ESD Rating: 6000V HBM The AO4423 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO4423L (Green Product) is offered in a lead-free .

  AO4425   AO4425







P-Channel FET

AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10mΩ (VGS = -20V) RDS(ON) < 11mΩ (VGS = -10V) ESD Rating: 4000V HBM The AO4425 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4425 is Pb-free (meets ROHS & Sony 259 specifications). AO4425L is a Green Product ordering option. AO4425 and AO4425L are electrically identical. SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -38 ±25 -14 -11 -50 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4425 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250 µA VGS=-10V, VDS=-5V VGS=-20V, I D=-14A RDS(ON).


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