AO4407A

AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. * RoHS and Halogen-Free Complaint Product Summary VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.3mH G ID IDM IAR EAR Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum -30 ±25 -12 -10 -60 -26 101 3.1 2.0 -55 to 150 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady State Steady State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units V V A mJ W °C Units °C/W °C/W °C/W Rev.11.0 June 2013 www.aosmd.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state ...