AO4406A

AO4406A 30V N-Channel MOSFET General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 13A < 11.5mΩ < 15.5mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D D D G S Bottom View G S S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C Maximum 30 ±20 13 10.4 100 22 24 3.1 2 -55 to 150 Units V V A A mJ W ° C VGS TA=25° C TA=70° C ID IDM IAS EAS PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev 2: Nov. 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AO4406A Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=12A IS=...