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AO4400 Datasheet

Part Number AO4400
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO4400 DatasheetAO4400 Datasheet (PDF)

July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unles.

  AO4400   AO4400






Part Number AO4409
Manufacturers Freescale
Logo Freescale
Description P-Channel MOSFET
Datasheet AO4400 DatasheetAO4409 Datasheet (PDF)

AO4409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON) , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage V.

  AO4400   AO4400







Part Number AO4409
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AO4400 DatasheetAO4409 Datasheet (PDF)

AO4409 30V P-Channel MOSFET General Description Product Summary The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -15A < 7.5mΩ < 12mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwi.

  AO4400   AO4400







Part Number AO4408L
Manufacturers Freescale
Logo Freescale
Description N-Channel MOSFET
Datasheet AO4400 DatasheetAO4408L Datasheet (PDF)

AO4408, AO4408L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C un.

  AO4400   AO4400







Part Number AO4408L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO4400 DatasheetAO4408L Datasheet (PDF)

Rev 3: June 2004 AO4408, AO4408L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast www.DataSheet4U.com switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D.

  AO4400   AO4400







Part Number AO4408
Manufacturers Freescale
Logo Freescale
Description P-Channel MOSFET
Datasheet AO4400 DatasheetAO4408 Datasheet (PDF)

Freescale AO4408/MC4408 N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadf.

  AO4400   AO4400







N-Channel MOSFET

July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -6.1 -5.1 -60 3 2.1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Ty.


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