AO4294
100V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ...
AO4294
100V N-Channel
MOSFET
General Description
Trench Power MV
MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100V 11.5A < 12mΩ < 15.5mΩ
Applications
Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications
100% UIS Tested 100% Rg Tested
SOIC-8
D
Top View
Bottom View
D D
D
D
Orderable Part Number
AO4294
G S S S
Package Type
SO-8
G S
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10μs
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM IAS EAS VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 11.5 9 46 20 20 120 3.1 2.0
-55 to 150
Units V V
A
A mJ V W °C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RqJA
31 59
Maximum Junction-to-Lead
Steady-State
RqJL
16
Max 40 75 24
Units °C/W °C/W °C/W
Rev.2.0: August 2020
www.aosmd.com
Page 1 of 5
AO4294
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown
Voltage
ID=250mA, VGS=0V
100
IDSS
...