Rev 3: Nov 2004
AO3414, AO3414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Descripti...
Rev 3: Nov 2004
AO3414, AO3414L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3414L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 20V ID = 4.2 A RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) RDS(ON) < 87mΩ (VGS = 1.8V)
TO-236 (SOT-23) Top View
G D
S
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±8 4.2 3.2 15 1.4 0.9
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient...
