FEATURES
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gat...
FEATURES
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
D
G S
Plastic-Encapsulate
Mosfets
AO3401
P-Channel
MOSFET
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current A
TA=25°C T =70°C
Pulsed Drain Current B
Power Dissipation A
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
I IDM PD
TJ, TSTG
Maximum
-30 ±12 -4.2 -3.5 -30 1.4
1 -55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol
RθJA
RθJL
Typ Max
65 90 85 125 43 60
Unit
V V A
W °C
Unit
°C/W °C/W °C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P1
Plastic-Encapsulate
Mosfets
AO3401
...