AM1331P

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology AM1331P P RO DU C TSU MMA RY V ) rDS(on) (O H M) DS (V 0.112 @ V G S = -10V -30 0.172 @ V G S = -4.5V ID (A ) -1.5 -1.2 G D S A BSOLUTE MA XIMUM RA TINGS (TA = 25 oC UNLESS OTHERW ISE NOTED) Param eter Sym bol Maxim um Units VDS Drain-Source Voltage -30 V ±20 G ate-Source Voltage VGS www.DataSheet.co.kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -1.5 -1.2 -2.5 ±0.28 0.34 0.22 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 150 C THERM A L RESISTA NCE RA TING S Param eter M axim umJunction-to-Am bient a Sym bol t <= 5 sec Steady-State RTHJA Maxim um 375 430 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM1331_B Datasheet pdf - htt...