AM1214-250

www.DataSheet4U.com AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA REFRACTORY /GOLD METALLIZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 300 W MIN. WITH 8.0 dB GAIN 1215-1400 MHz OPERATION M259 hermetically sealed ORDER CODE AM1214-250 BRANDING XAM1214-250 PIN CONNECTION 1 DESCRIPTION The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. 4 3 1. Collector 2. Base 2 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol PDISS IC VCBO Tj TSTG Parameter Power Dissipation (TC ≤ 85°C)* Device Current* Collector-Base Voltage Operating Junction Temperature Storage Temperature Value 786 21 70 +250 -65 to +200 Unit W A V °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance* 0.21 °C/W * Applies only to rated RF amplifier operation: 150 microsec / 10% July 2000 1/4 AM1214-250 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol BVCBO BVCES BVEBO ICES hFE IC = 50 mA IC = 50 mA IE = 20 mA VCE = 40 V VCE = 5 V Test Conditions IE = 0 mA VBE = 0 V IC = 0 mA VBE = 0 V IC = 0.5 A 10 Min. 70 70 3.5 10 Typ. Max. Unit V V V mA DYNAMIC @ 150 MICROSEC / 10 % Symbol POUT ηC GP f = 1215 - 1400 MHz f = 1215 - 1400 MHz f = 1215 - 1400...