AM1030N

AM1030N 100V N-Channel MOSFET ™ GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. ™ FEATURES 3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability ™ PIN ASSIGNMENT The package of AM1030N is€ SOT-223; the pin assignment is given by: VÛmw`Ry Ñb ww w ot f o g . ec o h.c m 1/8 Axelite Confidential Materials, do not copy or distribute without written consent. AM1030N ™ ORDER/MARKING INFORMATION Order Information Top Marking Logo AM1030N X X Package Type E: SOT223-3L Packing A : Taping AM 1 0 3 0 N Y WW X Part number ID code:internal WW:01~52 Year: A=2010 1=2011 ™ ABSOLUTE MAXIMUM RATINGS Characteristics Drain-Source Voltage Drain Current Continuous (TC = 25°C) Continuous (TC = 70°C) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt `Ry (Note Ñb€ 3) Power Dissipation (TC = 25°C) Derate above 25°C Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt...