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ALD210804 Datasheet

Part Number ALD210804
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description MOSFET
Datasheet ALD210804 DatasheetALD210804 Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210804 VGS(th)= +0.40V GENERAL DESCRIPTION The ALD210804 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110804 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularl.

  ALD210804   ALD210804






Part Number ALD210808A
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description MOSFET
Datasheet ALD210804 DatasheetALD210808A Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110808A/ALD110808 EPAD® MOSFET Family, with increased forward transconductance and output c.

  ALD210804   ALD210804







Part Number ALD210808
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description MOSFET
Datasheet ALD210804 DatasheetALD210808 Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110808A/ALD110808 EPAD® MOSFET Family, with increased forward transconductance and output c.

  ALD210804   ALD210804







Part Number ALD210802
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description MOSFET
Datasheet ALD210804 DatasheetALD210802 Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210802 VGS(th)= +0.20V GENERAL DESCRIPTION The ALD210802 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110802 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularl.

  ALD210804   ALD210804







Part Number ALD210800A
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description PRECISION N-CHANNEL EPAD MOSFET ARRAY
Datasheet ALD210804 DatasheetALD210800A Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS(th)= +0.00V FEATURES & BENEFITS • Zero Threshold™ VGS(th) = 0.00 V +/-0.01V • VOS (VGS(th) match) to 2mV / 10mV max. • Sub-threshold voltage (nano-power) operation • < 100 mV Min. operating voltage • < 1 nA Min. operating current • < 1 nW Min. operating power • > 100,000,000:1 operating current ranges • High transconductance and output conductance • Low RDS(ON) of 25Ω • Output current > 50 mA • Matched.

  ALD210804   ALD210804







MOSFET

ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210804 VGS(th)= +0.40V GENERAL DESCRIPTION The ALD210804 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110804 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210804 features precision threshold voltage, which enables circuit designs with input/ output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been suc.


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