ALD111933

ADVANCED LINEAR DEVICES, INC. DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY e TM EPAD ENA ® B L E D ALD111933 VGS(th)= +3.30V GENERAL DESCRIPTION The ALD111933 is a high precision monolithic dual N-Channel Enhancement Mode Matched Pair MOSFET Array matched at the factory using ALD’s proven EPAD® CMOS technology. This device is intended for precision nano-watt, low voltage, small signal applications. ALD111933 features a pecision matched +3.30V threshold voltage for each of the dual MOSFET devices as well as a max. offset voltage of 20mV. These two key features enable extremely low power (nW) precision comparator circuit functions with the threshold voltage itself being used as a zero (near-zero drain current) power coarse voltage reference. ALD111933 MOSFETs are designed and built with exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics. Each device is versatile as a circuit element and is a useful design component for a broad range of precision analog applications. They are basic building blocks for current mirrors, current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect V- and IC pins to the most negative voltage potential in the system on the printed circuit board. All other pins must have voltages within V+ and V- voltage limits. ALD111933 devices are ...