AF60N03

AF60N03 N-Channel Enhancement Mode Power MOSFET „ Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID (A) 45 www.DataSheet4U.com „ Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 12 „ Pin Assignments (Front View) 3 2 1 D G S „ Pin Descriptions Pin Name S G D Description Source Gate Drain „ Ordering information A X Feature F :MOSFET PN 60N03 X X Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel „ Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 8, 2005 1/5 AF60N03 N-Channel Enhancement Mode Power MOSFET „ Absolute Maximum Ratings Symbol VDS VGS ID IDM PD www.DataSheet4U.com Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25ºC TC=100...