ACE2600B

ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected. Features  VDS(V)=20V  ID=6A (VGS=4.5V)  RDS(ON)＜22mΩ (VGS=4.5V)  RDS(ON)＜26mΩ (VGS=2.5V)  RDS(ON)＜34mΩ (VGS=1.8V)  ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.8 A Drain Current (Pulse) * B IDM 30 Power Dissipation TA=25 OC TA=70 OC PD 1.3 W 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L VER 1.2 1 ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE2600B XX + H Halogen - free Pb - free GM : SOT-23-6L Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current V(BR)DSS IDSS IGSS RDS(ON) VGS(th) gFS VSD IS VGS=0V, ID=250uA VDS=20V, VGS=0V VGS=±8V, VDS=0V VGS=4.5V, ID=6.5A VGS=2.5V, ID=5.5A VGS=1.8V, ID=5A VDS=VGS, IDS=250uA V...