ACE2372M
N-Channel 100-V MOSFET
Description ACE2372M uses advanced trench technology to provide excellent RDS(ON). This...
ACE2372M
N-Channel 100-V
MOSFET
Description ACE2372M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low
voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology Low thermal impedance Fast switching speed
Applications:
LED Inverter Circuits DC/DC Conversion Circuits Motor drives
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Currenta Pulsed Drain Current b
TA=25°C TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM IS
PD
TJ, Tstg
Limit
100 ±20 0.66 0.52
3 0.66 1.3 0.8 -55 to 150
Unit V
A A W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient a
t<=10sec Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
VER 1.1 1
Packaging Type
Ordering information ACE2372M BM + H Halogen - free Pb - free BM : SOT-23-3
ACE2372M
N-Channel 100-V
MOSFET
VER 1.1 2
Electrical Characteristics
TA=25℃, unless otherwise specified.
ACE2372M
N-Channel 100-V
MOSFET
Parameter
Gate-Source Threshold
Voltage Gate-Body Leakage
Zero Gate
Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Volta...
