A821S

2SA821S Transistors High-voltage Amplifier Transistor (−210V, −30mA) 2SA821S zFeatures 1) High breakdown voltage, (VCER = −210V ) 2) Complements the 2SC1651S. zExternal dimensions (Unit : mm) SPT 4.0 3.0 2.0 (15Min.) 3Min. 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 (1)Emitter (2)Collector (3)Base Taping specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits −210 −210 −5 −30 250 150 −55 to +150 Unit V V V A W °C °C ∗ ∗ RBE=10kΩ zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −210 −210 −5 − − − 82 − − Typ. − − − − − − − 50 8 Max. − − − − −1 −1 −1 270 − Unit V V V µA µA V − MHz pF Conditions IC= −50µA IC= −100µA, RBE=10kΩ IE= −50µA VCB= −150V VEB= −4.5V IC/IB= −2mA/−0.2mA VCE= −3V, IC= −5A VCE= −5V , IE=2mA , f=30MHz VCE= −10V , IE=0A , f=1MHz zPackaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SA821S SPT PQ TP 5000 Rev.A 1/2 Free Datasheet http://www.Datasheet4U.com ...