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A614

INCHANGE
Part Number A614
Manufacturer INCHANGE
Description 2SA614
Published Feb 22, 2014
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emit...
Datasheet PDF File A614 PDF File

A614
A614

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA614 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.
) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.
5V (Max.
)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w PARAMETER s c s i .
w VALUE -80 -55 -5 -3 25 UNIT n c .
i m e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A PC Collector Power Dissipation W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range ...


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