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A1416 Datasheet

Part Number A1416
Manufacturers Sanyo
Logo Sanyo
Description 2SA1416
Datasheet A1416 DatasheetA1416 Datasheet (PDF)

Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 .

  A1416   A1416






Part Number A1419
Manufacturers Sanyo
Logo Sanyo
Description 2SA1419
Datasheet A1416 DatasheetA1419 Datasheet (PDF)

Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector .

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Part Number A1418
Manufacturers Sanyo
Logo Sanyo
Description 2SA1418
Datasheet A1416 DatasheetA1418 Datasheet (PDF)

Ordering number:ENN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications · Color TV audio output, inverter. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1418/2SC3648] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1418 Specifications .

  A1416   A1416







Part Number A1417
Manufacturers Sanyo
Logo Sanyo
Description 2SA1417
Datasheet A1416 DatasheetA1417 Datasheet (PDF)

Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to.

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Part Number A1415
Manufacturers Sanyo
Logo Sanyo
Description 2SA1415
Datasheet A1416 DatasheetA1415 Datasheet (PDF)

Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings a.

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2SA1416

Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Moutned on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)100V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)100mA * : The 2SA1416/2SC3646 are classified by 100mA hFE as follows : Rank R S T Marking hFE 100 to 200 2SA1416 : AB 2SC3646 : CB 140 S 280 200 to 400 hFE rank : R, S, T Ratings (–)120 (–)100 (–)6 (–)1 (–)2 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ max Unit (–)100 nA (–)100 nA 100* 400* 120 MHz Continued on next page. Any and all SANYO produ.


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