TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1296
Power Amplifier Applications Power Switching Applica...
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1296
Power Amplifier Applications Power Switching Applications
2SA1296
Unit: mm
Low saturation
voltage: VCE (sat) = −0.5 V (max) @IC = −2 A Complementary to 2SC3266.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO −20 V
Collector-emitter
voltage
VCEO −20 V
Emitter-base
voltage
VEBO −6 V
Collector current
IC −2 A
Base current
IB −0.5 A
Collector power dissipation Junction temperature Storage temperature range
PC 750 mW
Tj 150 °C
Tstg
−55~150
°C
JEDEC JEITA
TO-92 SC-43
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5F1B
temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.21 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage Emitter-base breakdown
voltage
DC current gain
Collector-emitter satur...