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8N65 Datasheet

Part Number 8N65
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 8N65 Datasheet8N65 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 8N65 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 1.4Ω@VGS = 10 .

  8N65   8N65






Part Number 8N65
Manufacturers CHONGQING PINGYANG
Logo CHONGQING PINGYANG
Description N-CHANNEL MOSFET
Datasheet 8N65 Datasheet8N65 Datasheet (PDF)

8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 8N65 ITO-220AB 8N65F TO-263 8N65B TO-262 8N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avala.

  8N65   8N65







Part Number 8N65
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel Mosfet Transistor
Datasheet 8N65 Datasheet8N65 Datasheet (PDF)

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High efficiency switch mode power supply ·PWM motor controls ·High efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

  8N65   8N65







N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 8N65 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 1.4Ω@VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N65L-TA3-T 8N65G-TA3-T 8N65L-TF3-T 8N65G-TF3-T 8N65L-TF1-T 8N65G-TF1-T 8N65L-TF3T-T 8N65G-TF3T-T 8N65L-T2Q-T 8N65G-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F3 TO-262 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-591.D 8N65  MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F1 TO-220F3 TO-262 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-591.D 8N65 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 650 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continu.


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