DatasheetsPDF.com

74AUP1G04

NXP Semiconductors

Low-power inverter

www.DataSheet4U.com 74AUP1G04 Low-power inverter Rev. 02 — 28 June 2006 Product data sheet 1. General description The ...


NXP Semiconductors

74AUP1G04

File Download Download 74AUP1G04 Datasheet


Description
www.DataSheet4U.com 74AUP1G04 Low-power inverter Rev. 02 — 28 June 2006 Product data sheet 1. General description The 74AUP1G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G04 provides the single inverting buffer. 2. Features s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-C Class 3A. Exceeds 5000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Low noise overshoot and undershoot < 10 % of VCC s IOFF circuitry provides partial Power-down mode operation s Multiple package options s Specified from −40 °C to +85 °C and −40 °C to +125...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)