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74AHCT1G66 Datasheet

Part Number 74AHCT1G66
Manufacturers NXP
Logo NXP
Description Bilateral switch
Datasheet 74AHCT1G66 Datasheet74AHCT1G66 Datasheet (PDF)

INTEGRATED CIRCUITS DATA SHEET 74AHC1G66; 74AHCT1G66 Bilateral switch Product specification Supersedes data of 2002 Feb 15 2002 Jun 06 Philips Semiconductors Product specification Bilateral switch FEATURES • Very low ON-resistance: – 26 Ω (typical) at VCC = 3.0 V – 16 Ω (typical) at VCC = 4.5 V – 14 Ω (typical) at VCC = 5.5 V. • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • High noise immunity • Low power di.

  74AHCT1G66   74AHCT1G66






Part Number 74AHCT1G66
Manufacturers nexperia
Logo nexperia
Description Single-pole single-throw analog switch
Datasheet 74AHCT1G66 Datasheet74AHCT1G66 Datasheet (PDF)

74AHC1G66; 74AHCT1G66 Single-pole single-throw analog switch Rev. 5 — 11 January 2022 Product data sheet 1. General description The 74AHC1G66; 74AHCT1G66 is a single-pole, single-throw analog switch with two input/output terminals (nY and nZ) and a digital enable input (nE). When nE is LOW, the analog switch is turned off. The enable input is overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Very low ON.

  74AHCT1G66   74AHCT1G66







Bilateral switch

INTEGRATED CIRCUITS DATA SHEET 74AHC1G66; 74AHCT1G66 Bilateral switch Product specification Supersedes data of 2002 Feb 15 2002 Jun 06 Philips Semiconductors Product specification Bilateral switch FEATURES • Very low ON-resistance: – 26 Ω (typical) at VCC = 3.0 V – 16 Ω (typical) at VCC = 4.5 V – 14 Ω (typical) at VCC = 5.5 V. • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • High noise immunity • Low power dissipation • Balanced propagation delays • SOT353 and SOT753 package • Output capability: non standard • Specified from −40 to +125 °C. QUICK REFERENCE DATA Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns. 74AHC1G66; 74AHCT1G66 DESCRIPTION The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off. TYPICAL SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD CS Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ((CL + CS) × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = maximum switch capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. PARAMETER turn-on time E to Vos turn-off time E to Vos input capacitance power dissipation capacitance switch capacitance CL = 50 pF; f = 10 .


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