PD- 91330F
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF7413
HEXFET® Power MOSFET RDS(on) max(mW)
11@...
PD- 91330F
SMPS
MOSFET
Applications l High frequency DC-DC converters
IRF7413
HEXFET® Power
MOSFET RDS(on) max(mW)
11@VGS = 10V
VDSS
30V
ID
12A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche
Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
12 9.6 96 2.5 0.02 ± 20 1.0 -55 to + 150 300 (1.6mm from case )
Units
A W W/°C V V/ns °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units
°C/W
Notes through are on page 8
www.irf.com
1
3/19/02
IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold
Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RDS(on) VGS(th) IDSS IGSS
Min. 30 ––– ––– ––– 1.0 ––– ––– ––– –––
Typ. ––– 0.03 ––– ––...