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70T03GJ Datasheet

Part Number 70T03GJ
Manufacturers Silicon Standard
Logo Silicon Standard
Description SSM70T03GJ
Datasheet 70T03GJ Datasheet70T03GJ Datasheet (PDF)

SSM70T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM70T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM70T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM70T03GJ in TO-251, is available for vert.

  70T03GJ   70T03GJ






Part Number 70T03GP
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description AP70T03GP
Datasheet 70T03GJ Datasheet70T03GP Datasheet (PDF)

Advanced Power Electronics Corp. AP70T03GS/P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Speed ▼ RoHS Compliant G D S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 30V 9mΩ 60A G D S TO-263(S) The TO-263 package is universally preferred for all commercial.

  70T03GJ   70T03GJ







Part Number 70T03GH
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description AP70T03GH
Datasheet 70T03GJ Datasheet70T03GH Datasheet (PDF)

www.DataSheet4U.com AP70T03GH/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G S BVDSS RDS(ON) ID 30V 9mΩ 60A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustr.

  70T03GJ   70T03GJ







SSM70T03GJ

SSM70T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM70T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM70T03GH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM70T03GJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. 30V 9mΩ 60A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G G D S D S TO-251 (suffix J) TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 100°C Pulsed drain current 1 Value 30 ±20 60 43 195 53 0.36 3 Units V V A A A W W/°C mJ °C °C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy Storage temperature range Operating junction temperature range 29 -55 to 175 -55 to 175 THERMAL CHARACTERISTICS Symbol RΘ JC RΘ JA Parameter Maximum thermal resistance, junction-case Maximum therma.


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