70N20

FDA70N20 — N-Channel UniFETTM MOSFET December 2013 FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A Low Gate Charge (Typ. 66 nC) Low Crss (Typ. 89 pF) 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Uninterruptible Power Supply AC-DC Power Supply D G G D S TO-3PN S TC = 25°C unless otherwise noted. Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDA70N20 200 70 45 280 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate Above 25°C 1742 70 41.7 4.5 417 3.3 -55 to +150 300 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol R...