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70N08 Datasheet

Part Number 70N08
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet 70N08 Datasheet70N08 Datasheet (PDF)

FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description Features • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has.

  70N08   70N08






Part Number 70N06
Manufacturers INCHANGE
Logo INCHANGE
Description TO-220F N-Channel MOSFET Transistor
Datasheet 70N08 Datasheet70N06 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT .

  70N08   70N08







Part Number 70N06
Manufacturers INCHANGE
Logo INCHANGE
Description TO-220C N-Channel MOSFET Transistor
Datasheet 70N08 Datasheet70N06 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT .

  70N08   70N08







Part Number 70N06
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description TO-3 N-Channel MOSFET Transistor
Datasheet 70N08 Datasheet70N06 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N06 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 60 ±30 70 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25℃ 250 W .

  70N08   70N08







Part Number 70N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description RFP70N06
Datasheet 70N08 Datasheet70N06 Datasheet (PDF)

Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Fo.

  70N08   70N08







N-Channel MOSFET

FQA70N08 August 2000 QFET FQA70N08 80V N-Channel MOSFET General Description Features • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA70N08 80 77.5 54.8 310 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 1150 77.5 19 6.5 190 1.27 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temp.


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