SPECIFICATION
Device Name : Type Name : Spec. No. :
IGBT Module 6MBI75S-060
MS5F 5326
Jan. 27 ’03 Y.Kobayashi Jan. 27 ’03 T.Miyasaka T.Fujihira
K.Yamada
Fuji Electric Co.,Ltd. Matsumoto Factory
MS5F5326
1 13
H04-004-07
Revised Records
Date
Classification
Ind.
Jan.- 27 - ’03 enactment
Content
Applied date
Issued date
Drawn
Checked Approved
T.Miyasaka
K.Yamada T.Fujihira
MS5F5326
2 13
H04-004-06
1. Outline Drawing ( Unit : mm )
6MBI75S-060
2. Equivalent circuit
21(P)
1(Gu) 2(E.
IGBT
SPECIFICATION
Device Name : Type Name : Spec. No. :
IGBT Module 6MBI75S-060
MS5F 5326
Jan. 27 ’03 Y.Kobayashi Jan. 27 ’03 T.Miyasaka T.Fujihira
K.Yamada
Fuji Electric Co.,Ltd. Matsumoto Factory
MS5F5326
1 13
H04-004-07
Revised Records
Date
Classification
Ind.
Jan.- 27 - ’03 enactment
Content
Applied date
Issued date
Drawn
Checked Approved
T.Miyasaka
K.Yamada T.Fujihira
MS5F5326
2 13
H04-004-06
1. Outline Drawing ( Unit : mm )
6MBI75S-060
2. Equivalent circuit
21(P)
1(Gu) 2(Eu)
3(Gx) 4(Ex) 20(N)
5(Gv) 6(Ev)
19(U)
7(Gy) 8(Ey)
13(P)
9(Gw) 10(Ew)
17(V)
11(Gz) 12(Ez)
15(W) 14(N)
MS5F5326
3 13
H04-004-03
3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified )
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
Ic Ic pulse
-Ic
Continuous 1ms
-Ic pulse
1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage(*1) Mounting Screw Torque (*2)
Viso
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5~3.5 Nm (M5)
Maximum Ratings 600 +-20 75 150 75 150 300 150
-40~ +125 2500 3.5
Units V V
A
W C C V Nm
4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse t.