6LP04MH

www.DataSheet4U.com Ordering number : ENA0457 6LP04MH P-Channel Silicon MOSFET 6LP04MH Features General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings -60 ±10 --100 --400 0.6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=-1mA, VGS=0V VDS=--60V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--100µA VDS=--10V, ID=--50mA ID=-50mA, VGS=-4V ID=-30mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --60 --1 ±10 --0.4 130 220 6.5 7.4 10 15 3.5 1.0 75 116 665 270 8.5 11 20 --1.4 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns M...