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Ordering number : ENA0458
6LN04MH
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
6LN0...
www.DataSheet4U.com
Ordering number : ENA0458
6LN04MH
SANYO Semiconductors
DATA SHEET
N-Channel Silicon
MOSFET
6LN04MH
Features
General-Purpose Switching Device Applications
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 60 ±10 200 800 0.6 150 --55 to +150 Unit V V mA mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 0.4 280 480 2.2 2.4 3.5 26 5.9 3.2 18.5 26 146 69 2.9 3.4 7.0 1.3 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns
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