6AM13

6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4, 6, 11. P-ch Gate 5, 12. P-ch Source Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Nch 60 ±20 10 40 10 42 4.8 150 Pch –60 ±20 –10 –40 –10 Unit V V A A A W W °C °C –55 to +150 2 6AM13 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6 — — — — — — — — — Typ — — — — — 0.06 0.08 9.5 860 450 140 10 50 180 110 1.0 120 Max — — ±10 250 2.0 P chann...