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FDS6673BZ P-Channel PowerTrench® MOSFET
January 2006
FDS6673BZ P-Channel PowerTrench® MOSFET
-30V...
www.DataSheet.co.kr
FDS6673BZ P-Channel PowerTrench®
MOSFET
January 2006
FDS6673BZ P-Channel PowerTrench®
MOSFET
-30V, -14.5A, 7.8mΩ General Description
This P-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications HBM ESD protection level of 6.5kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant
D
D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note1a) (Note1b) (Note1c) (Note1a) Ratings -30 ±25 -14.5 -75 2.5 1.2 1.0 -55 to 150 °C W Units V V A A
Thermal Characteristics
RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6673BZ Device FDS6673BZ Reel Size 13’’ Tape Width 12mm Quantity 2500 units
©2006 Fairchild Se...