Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear ...
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low
voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON)
VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information
Device
60N035T 60N035S
Package
TO-220 TO-263 ( D2 )
Temp.
0 to 150°C 0 to 150°C
Absolute Maximum Rating
Symbol
ID
Parameter
Drain Current Continues Pulsed Drain-Source
Voltage Gate Source
Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range
Max
60 180 30 ±20 50 0.4 -65 to 175
Unit
A V V W W/°C °C
VDSS VGSV PD TJ TSTG
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
60N035
Electrical Characteristi...