Ordering number : ENN6560
5LN01SS
N-Channel Silicon MOSFET
5LN01SS
Ultrahigh-Speed Switching Applications
Features
• •...
Ordering number : ENN6560
5LN01SS
N-Channel Silicon
MOSFET
5LN01SS
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2179
[5LN01SS]
1.4
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.3
0.25
0.1
3
0.8
0.2
0.3
1 0.45
2
1.4
1 : Gate 2 : Source 3 : Drain
0.6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
SANYO : SSFP
Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=50V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V Ratings min 50 10 ± 10 0.4 0.13 0.18 6 7.1 10 7.8 9.9 20 1.3 typ max Unit V µA µA V S Ω Ω Ω
Marking : YB
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applicatio...
