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5DL2C41A

Toshiba Semiconductor

SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK

5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2C41A SWITCHING MODE POWER SUPPLY APPLIC...


Toshiba Semiconductor

5DL2C41A

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Description
5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2C41A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Unit: mm l Repetitive Peak Reverse Voltage l Average Output Rectified Current l Ultra Fast Reverse-Recovery Time : VRRM = 200V : IO = 5A : trr = 35ns MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Tc = 126°C) Peak One Cycle Surge Forward Current (Non Repetitive) Junction Temperature Storage Temperature Range Screw Torque SYMBOL VRRM IO IFSM Tj Tstg ― RATING 200 5 25 (50Hz) −40~150 −40~150 0.6 UNIT V A A °C °C N·m ELECTRICAL CHARACTERISTICS (Ta = 25°C) JEDEC JEITA TOSHIBA Weight: 2.0 g TO-220AB ― 12−10E1A CHARACTERISTIC Peak Forward Voltage (Note 1) Repetitive Peak Reverse Current (Note 1) Reverse Recovery time (Note 1) Forward Recovery time (Note 1) Thermal Resistance Note 1: A value of one cell. SYMBOL TEST CONDITION VFM IFM = 2.5A IRRM VRRM = 200V trr tfr Rth (j−c) IF = 2A, di / dt = −20A / µs IF = 1.0A DC Total, Junction to Case TYP. MAX UNIT ― 0.98 V ― 10 µA ― 35 ns ― 100 ns ― 4.0 °C / W POLARITY MARKING * 1 MARK *2 A 5DL2C *3 1 2001-07-13 5DL2C41A 2 2001-07-13 5DL2C41A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vul...




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