5DL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2C41A
SWITCHING MODE POWER SUPPLY APPLIC...
5DL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2C41A
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
Unit: mm
l Repetitive Peak Reverse
Voltage l Average Output Rectified Current l Ultra Fast Reverse-Recovery Time
: VRRM = 200V : IO = 5A : trr = 35ns
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse
Voltage Average Output Rectified Current (Tc = 126°C)
Peak One Cycle Surge Forward Current (Non Repetitive)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL VRRM IO
IFSM Tj Tstg ―
RATING 200 5
25 (50Hz) −40~150 −40~150
0.6
UNIT V A
A °C °C N·m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC JEITA TOSHIBA
Weight: 2.0 g
TO-220AB ―
12−10E1A
CHARACTERISTIC
Peak Forward
Voltage
(Note 1)
Repetitive Peak Reverse Current (Note 1)
Reverse Recovery time
(Note 1)
Forward Recovery time
(Note 1)
Thermal Resistance
Note 1: A value of one cell.
SYMBOL
TEST CONDITION
VFM
IFM = 2.5A
IRRM
VRRM = 200V
trr tfr Rth (j−c)
IF = 2A, di / dt = −20A / µs IF = 1.0A DC Total, Junction to Case
TYP. MAX UNIT ― 0.98 V ― 10 µA
― 35 ns ― 100 ns ― 4.0 °C / W
POLARITY
MARKING
* 1 MARK *2 A
5DL2C
*3
1 2001-07-13
5DL2C41A
2 2001-07-13
5DL2C41A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vul...