isc N-Channel MOSFET Transistor
4N60
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min...
isc N-Channel
MOSFET Transistor
4N60
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
600
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4
A
ID(puls)
Pulse Drain Current
16
A
Ptot
Total Dissipation@TC=25℃
106
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3
℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
4N60
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-
Voltage
IS=4.4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2.2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 600V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
ID=4A; VDD=300V; RL=25Ω
MIN TYPE MAX UNIT
600
V
2.0
4.0
V
1.4
V
2.5
Ω
±100 nA
10
µA
45
100
13
...
