DatasheetsPDF.com

4N33

Siemens Semiconductor Group

PHOTODARLINGTON OPTOCOUPLER

4N32/4N33 PHOTODARLINGTON OPTOCOUPLER FEATURES • Very High Current Transfer Ratio, 500% Min. • High Isolation Resistance...


Siemens Semiconductor Group

4N33

File Download Download 4N33 Datasheet


Description
4N32/4N33 PHOTODARLINGTON OPTOCOUPLER FEATURES Very High Current Transfer Ratio, 500% Min. High Isolation Resistance, 1011 Ω Typical Standard Plastic DIP Package Underwriters Lab File #E52744 V VDE Approvals #0884 (Available with Option 1) D E Dimensions in inches (mm) Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter DESCRIPTION The 4N32 and 4N33 are optically coupled isolators with a Gallium Arsenide infrared LED and a silicon photodarlington sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Maximum Ratings Emitter Peak Reverse Voltage ........................................3 V Continuous Forward Current .........................60 mA Power Dissipation at 25°C..........................100 mW Derate Linearly from 55°C....................1.33 mW/°C Detector Collector-Emitter Breakdown Voltage, BVCEO .......................................................... 30 V Emitter-Base Breakdown Voltage, BVEBO ............................................................. 8V Collector-Base Breakdown Voltage, BVCBO .......................................................... 50 V Emiter-Collector Breakdown Voltage, BVECO ............................................................ 5 V Collector (load) Current...........




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)