PART OBSOLETE - EOL18
Bulletin I2717 rev. G 05/02
4GBU Series
4.0 Amps Single Phase Full Wave
Features
Diode chips are ...
PART OBSOLETE - EOL18
Bulletin I2717 rev. G 05/02
4GBU Series
4.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 V RMS) Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved
Bridge Rectifier
IO(AV) = 4A VRRM = 50/ 800V
Description
These GBU Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment.
Major Ratings and Characteristics Parameters
IO @ TC IFSM @ 50Hz @ 60Hz I t
2
4GBU
4 100 150 158 113 104 50 to 800 - 55 to 150
Units
A
°C
A A A2s A2s V
o
@ 50Hz @ 60Hz
4GBU
VRRM TJ
range
C
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4GBU Series
Bulletin I2717 rev. G 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage Code VRRM , max repetitive peak rev.
voltage TJ = TJ max. V 50 100 200 400 600 800 VRMS , max RMS
voltage TJ = TJ max. V 35 70 140 280 420 560 IRRM max. @ rated VRRM TJ = 25°C µA 5 5 5 5 5 5 IRRM max. @ rated VRRM TJ = 150°C µA 400 400 400 400 400 400
4GBU 4GBU...F
005 01 02 04 06 08
Forward Conduction
Parameters
IO IFSM Maximum DC output current Maximum peak, one-cy...