4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor drive...
