4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver and solenoid driver and lamp driver
4AJ11
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