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4946
Dual N-Channel MOSFET
Description
Shenzhen TuoFeng Semiconductor Technology co., LTD 4946 Dual N-Channel High Density Trench
MOSFET
PRODUCT SUMMARY VDSS ID FEATURES RDS(on) (mΩ) Max 52 @ VGS = 10V P ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. 5.0A 60V 4.0A 75 @ VGS = 4.5V P D1 D2 SOP-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 S1 ...
TuoFeng
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