4920

Shenzhen Tuofeng Semiconductor Technology co., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET 4920 ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 The TUOFENG MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID 30V 25mΩ 7A D1 G1 G2 S1 D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 IDM PD@TA=25℃ TSTG TJ Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 30 ± 20 7 20 2 0.016 -55 to 150 -55 to 150 Units V V A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient3 Max. Value 62.5 Unit ℃/W Shenzhen Tuofeng Semiconductor Technology co., LTD 4920 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=7A VGS=4.5V, ID=5.2A Gate Threshold Voltage Forward ...