4835

Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed -30 V ±25 -8 A -50 *Surface Mounted on FR4 Board, t ≤ 10 sec. TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted) Symbol PD TJ TSTG RθJA Parameter Maximum Power Dissipation Maximum Junction Temperature TA = 25°C TA = 100°C Storage Temperature Range Thermal Resistance - Junction to Ambient Rating 2.5 1 150 -55 to 150 50 Unit W °C °C/W Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gat...