AP4525GEH
RoHS-compliant Product
Advanced Power www.datasheet4u.com Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance
S1 G1 D1/D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID
40V 28mΩ 15A -40V 42mΩ -12A
S2
G2
P-CH BVDSS
TO-252-4L
RDS(ON) ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes.
AP4525GEH
AP4525GEH
RoHS-compliant Product
Advanced Power www.datasheet4u.com Electronics Corp.
▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance
S1 G1 D1/D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID
40V 28mΩ 15A -40V 42mΩ -12A
S2
G2
P-CH BVDSS
TO-252-4L
RDS(ON) ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
D1 G1 G2
D2
S1
S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating N-channel 40 ±16 15.0 12.0 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -40 ±16 -12.0 -10.0 -50
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
1 200809235
AP4525GEH
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
www.datasheet4u.com
o
Symbol
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 40 1 -
Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2
Max. Units 28 32 3 1 25 ±30 14 930 3 V V/℃ mΩ mΩ.