Shenzhen Tuofeng Semiconductor Technology co., LTD
4409
P-Channel Enhancement-Mode MOSFET (-30V, -12A)
PRODUCT SUMMARY...
Shenzhen Tuofeng Semiconductor Technology co., LTD
4409
P-Channel Enhancement-Mode
MOSFET (-30V, -12A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
-30V -12A
12 @ VGS = -10V ,ID=-12A 15 @ VGS = -4.5V ,ID=-10A
Features
· Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired
·
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol VDS VGS
ID
Drain-Source
Voltage Gate-Source
Voltage
Parameter
Drain Current @TA=25oC
IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.3mH
Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC IS Maximum Diode Forward Current
Tj, Tstg RqJA
Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b
a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board
Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain
Ratings -30 ±20
-12
-60 30 135 3 2.1 -2.1 -55 to +150 50
Units V V
A
A A mJ
W
A °C °C/W
1
Shenzhen Tuofeng Semiconductor Technology co., LTD
4409
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
· Off Characteristics
BVDSS Drain-Source Breakdown
Voltage
VGS=0V, ID=-250uA
IDSS Zero Gate
Voltage Drain Current
VDS=-24V, VGS=0V
IGSS Gate-Body Leakage Current
· On Characteristicsc
VGS(th)
Gate Threshold
Voltage
IDS(on)
On State Drain Curren...