3SK134B

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES High Power Gain : Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit : mm) 2.8 +0.2 – 0.3 0.4 +0.1 – 0.05 Suitable for use as RF amplifier in UHF TV tuner. Automatically Mounting : Surface Mount Package : Embossed Type Taping 4 Pins Mini Mold (EIAJ: SC-61) 2.9±0.2 0.95 1.5 +0.2 – 0.1 2 (1.8) Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 : RL ≥ 10 kΩ VG1S VG2S VG1D VG2D ID PD Tch Tstg ±8 (±10)*1 18 18 25 200 125 V V V V mA mW °C °C 1.1 +0.2 – 0.1 ±8 (±10)*1 0.85 Drain to Source Voltage VDSX 18 V 1 4 0.6 +0.1 – 0.05 5o 5o 0.8 0.4 +0.1 – 0.05 0.16 +0.1 – 0.05 5o 0 to 0.1 –55 to +125 5o PIN CONNECTIONS 1. Source 2. Drain 3. Gate2 4. Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage fields. Document No. P10566EJ2V0DS00 (2nd edition) (Previous No. TD-2398) Date Published August 1995 P Printed in Japan © (1.9) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 3 0.4 +0.1 – 0.05 1993 3SK134B ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gat...