DATA SHEET SHEET DATA
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIEL...
DATA SHEET SHEET DATA
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
FEATURES
Suitable for use as RF amplifier in VHF TV tuner. Low Crss : 0.05 pF TYP. High Gps : 23 dB TYP. Low NF : 1.3 dB TYP.
PACKAGE DIMENSIONS (Unit: mm)
0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06
+0.1
2.8 −0.3 1.5 2
+0.2 +0.1
+0.1
+0.2 −0.1
Drain to Source
Voltage Gate1 to Source
Voltage Gate2 to Source
Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature
VDSX VG1S VG2S ID PT Tch Tstg
20
V V V mA mW
0.6 −0.05
+0.1
25 200 125
5°
5°
5°
0 to 0.1
55 to +125
C C
+0.2 −3.1
1.1
0.8
5°
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source Breakdown
Voltage Drain Current Gate1 to Source Cutoff
Voltage Gate2 to Source Cutoff
Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance SYMBOL BVDSX IDSS VG1S(OFF) VG2S(OFF) IG1SS IG2SS MIN. 20 7 10 25 TYP. MAX. UNIT V mA V V nA nA mS
PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1
TEST CONDITIONS VG1S = VG2S = 2 V, ID = 10 A VDS = 6 V, VG2S = 3 V, VG1S = 0 VDS = 8 V, VG2S = 0, ID = 5 A VDS = 8 V VG1S = 0, ID = 5 A VDS = 0, VG1S = 8 V, VG2S = 0 VDS = 0, VG2S = 8 V, VG1S = 0 VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 kHz
2.0 1.5 20 20
22 28
yfs
Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure
Ciss Coss Crss Cps NF
4.0 2.2...