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3P4MH Datasheet

Part Number 3P4MH
Manufacturers NEC
Logo NEC
Description THYRISTORS
Datasheet 3P4MH Datasheet3P4MH Datasheet (PDF)

DATA SHEET THYRISTORS 3P4MH, 3P6MH 3 A MOLD SCR The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs with an average on-current of 3 A. The repeat peak offvoltages (and reverse voltages) are 400 V and 600 V. PACKAGE DRAWING (UNIT: mm) FEATURES • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible. • Employs flame-retardant epox.

  3P4MH   3P4MH






Part Number 3P4M
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Thyristors
Datasheet 3P4MH Datasheet3P4M Datasheet (PDF)

INCHANGE Semiconductor isc Thyristors APPLICATIONS ·Motor speed control for household appliance. ·Temperature control for heater and constant temperature box. ·Constant voltage power source and battery charger. ·Automotive application such as regulator. ·Various solid state relay etc. isc Product Specification 3P4M ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(AV) IT(RMS) ITSM Tj Tstg Repetitive peak off-state voltage Repetitive peak reverse voltage On-state current RMS on.

  3P4MH   3P4MH







THYRISTORS

DATA SHEET THYRISTORS 3P4MH, 3P6MH 3 A MOLD SCR The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs with an average on-current of 3 A. The repeat peak offvoltages (and reverse voltages) are 400 V and 600 V. PACKAGE DRAWING (UNIT: mm) FEATURES • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible. • Employs flame-retardant epoxy resin (UL94V-0). APPLICATIONS Noncontact switches of consumer electronic euipments, electric equipments, audio quipments, and light indutry equipements Electrode connection <1>Cathode <2>Anode <3>Gate Standard weight: 1.4 *TC test bench-mark ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Non-repetitive peak reverse voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-voltage Average on-state current Effective on-state current Surge on-state current Fusing current Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate reverse voltage Junction temperature Storage temperature Symbol VRSM VDSM VRRM VDRM IT(AV) IT(RMS) ITSM 3P4MH 3P6MH Ratings V V V V A A A A2s A/µs W W A V °C °C Unit RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Refer to Figure 11. − Refer to Figure 2. − − Refer to Figure 3. − − − − 500 700 500 700 400 600 400 600 3 (Tc = 87°C, Single half-wave, .


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