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3N100E

Motorola
Part Number 3N100E
Manufacturer Motorola
Description MTB3N100E
Published Sep 22, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power ...
Datasheet PDF File 3N100E PDF File

3N100E
3N100E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .
™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading perforcom mance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and c...


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