www.DataSheet4U.com
Ordering number : ENN6139
3LP01M
P-Channel Silicon MOSFET
3LP01M
Ultrahigh-Speed Switching Applic...
www.DataSheet4U.com
Ordering number : ENN6139
3LP01M
P-Channel Silicon
MOSFET
3LP01M
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2158
[3LP01M]
0.425
0.3
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.15
3
2.1 1.250
0 to 0.1
0.425
1 2 0.65 0.65 2.0
0.3 0.9
0.6
0.2
1 : Gate 2 : Source 3 : Drain SANYO : MCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -30 ± 10 --0.1 --0.4 0.15 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff
Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--100µA VDS=-10V, ID=--50mA Ratings min --30 --10 ± 10 --0.4 80 110 --1.4 typ max Unit V µA µA V mS
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Co...