INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD15C
DESCRIPTION ·Collector-Emitte...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD15C
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 150V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS ·Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
200 V
VCEO Collector-Emitter
Voltage
150 V
VEBO
Emitter-Base
Voltage
5V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
175 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 2.0 ℃/W
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD15C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2.5A; IB= 0.25A
ICEO Collector Cutoff Current
VCE= 50V; IB=0
ICBO Collector Cutoff Current
VCB= 50V; IE=0
hFE DC Current Gain
IC= 2A; VCE= 10V
tf Fall Time
IC= 3A; IB1= 0.2A, IB2= -0.3A,
MIN MAX UNIT 150 V 200 V
5V 1.5 V 1....